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| MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors inOne) MP4506 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm * * * * Package with heat sink isolated to lead (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 5 A (max) High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C Tc = 25C PT VIsol Tj Tstg DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 5 5 8 0.1 3.0 5.0 W 25 1000 150 -55 to 150 V C C Unit V V V A A W JEDEC JEITA TOSHIBA 2-32B1B Weight: 6.0 g (typ.) Array Configuration 2 5 4 8 9 12 11 1 R1 R2 3 6 R2 200 7 10 R1 5 k 1 2004-07-01 MP4506 Marking MP4506 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25C) Thermal resistance from junction to case (4-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Rth (j-c) 5.0 C/W Symbol Max Unit Rth (j-a) 25 C/W Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 100 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 30 mA, IB = 0 A VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 3 A, IB = 12 mA VCE = 3 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 10 Min 0.3 100 100 1000 1000 3 Typ. 40 0.5 Max 10 10 2.0 2.0 2.5 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 3.0 s IB2 VCC = 30 V 2.0 Fall time tf IB1 = -IB2 = 12 mA, duty cycle 1% 2 2004-07-01 MP4506 Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Maximum forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 3 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.2 1.0 5 Max 5 8 1.8 Unit A A V s C 3 2004-07-01 MP4506 IC - VCE 8 5 3 2 1.5 6 1 0.7 4 0.5 IB = 0.3 mA 2 Common emitter Tc = 25C 8 IC - VBE Common emitter VCE = 3 V IC (A) IC (A) Collector current 6 Collector current 4 Tc = 100C 2 25 -55 0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 30000 Common emitter VCE = 3 V 2.4 VCE - IB (V) Common emitter 2.0 Tc = 25C VCE hFE 10000 5000 3000 25 1000 500 -55 Tc = 100C 1.6 3 1 0.8 0.1 5 DC current gain Collector-emitter voltage IC = 8 A 1.2 0.4 200 0.05 0.1 0.3 0.5 1 3 5 10 20 ) 0 0.1 Collector current IC (A) 0.3 0.5 1 3 5 10 30 50 100 300 Base current IB (mA) VCE (sat) - IC 10 10 Common emitter 5 3 IC/IB = 250 VBE (sat) - IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 5 3 Tc = -55C 25 100 IC/IB = 250 1 25 0.5 0.3 0.1 Tc = -55C 1 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 4 2004-07-01 MP4506 rth - tw 300 (C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) rth Transient thermal resistance 30 (3) 10 (2) (1) -No heat sink/Attached on a circuit board(1) 1-device operation 1 (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.3 0.001 0.01 0.1 1 10 Circuit board 100 1000 3 Pulse width tw (s) Safe Operating Area 20 10 5 8 PT - Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation 6 (4) (3) 4 (2) (1) 2 Circuit board (4) 4-device operation Attached on a circuit board Collector current IC 1 0.5 0.3 Total power dissipation (A) 3 PT 10 ms 1 ms 100 s (W) IC max (pulsed)* 0 0 0.1 *: Single nonrepetitive pulse Tc = 25C 40 80 120 160 200 Ambient temperature Ta (C) 0.05 Curves must be derated linearly with VCEO max increase in temperature. 0.03 1 3 5 10 30 50 100 200 Collector-emitter voltage VCE (V) Tj - PT 160 (C) Tj (1) 120 (2) (3) (4) Junction temperature increase Attached on a circuit board 80 Circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0 0 2 4 6 8 10 Total power dissipation PT (W) 5 2004-07-01 MP4506 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-01 |
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